Early Power Transistor Evolution, Part 2, Silicon

As discussed in part 1 of this two-part posting on early power transistor evolution, by the early 1960’s germanium power transistors were in widespread use in DC power supplies, audio amplifiers, and other relatively low frequency power applications. Although fairly expensive at that time the manufacturers had processes establish to reliably produce them in volume. To learn more about early germanium power transistors click here to review part 1.

As with most all things manufacturers continued to investigate ways of making things better, faster, and cheaper. Transistors were still relatively new and ready for further innovation. Next to germanium silicon was the other semiconductor in widespread use and with new and different processes developed for transistor manufacturing, silicon quickly displaced germanium as the semiconductor of choice for power transistors. One real workhorse of a power transistor that has truly stood the “Test of Time” is the 2N3055, pictured in Figure 1. Also pictured is his smaller brother, the 2N3054.

Figure 1: 2N3055 and 2N3054 power transistors

Following are some key maximum ratings on the 2N3055 power transistor:

• V_CEO = 60V
• V_CBO = 100V
• V_EBO= 7V
• I_C = 15A
• P_D = 115W
• hfe= 45 typical
• f_T = 1.5 MHz
• Thermal resistance = 1.5 ^oC/W
• T_J= 200 ^oC
• Package: TO-3 (now TO-204AA)
• Polarity: NPN
• Material/process: Silicon diffused junction hometaxial-base structure

Diffused junction silicon transistors made major inroads in the early 1960’s ultimately making the germanium power transistors obsolete.  One huge improvement using silicon, especially for power transistors, is the junction temperature, which is generally rated for 200 ^oC.  This allowed operating at much higher ambient temperatures and at higher power levels when compared to germanium. 

While the alloy junction process being used for the early germanium transistors favored making PNP transistors, the diffused junction process on silicon favored making NPN transistors somewhat more. Silicon diffused junction NPN transistors are much more prevalent than PNP devices, and the PNP complements to NPN devices, where available, are more costly.  

The diffusion process made a giant leap in transistor mass production possible. Many transistors could now be made at once on a larger silicon wafer, greatly reducing the cost. The more precise nature of the diffusion junction over the alloy junction also improved performance. As one example, tor the 2N3055 the transition frequency increased roughly another order of magnitude over the 2N1532 germanium alloy junction transistor in part 1, to 1.5 MHz.  

The hometaxial-base structure is a single simultaneous diffusion into both sides of a homogenously-doped base wafer, one side forming the collector and the other side the emitter. A pattern on the emitter side is etched away around the emitter, down to the P-type layer, to form the base. The emitter is left standing as a plateau or “mesa” above the base.

The 2N3054 was electrically identical to the 2N3055 except for its lower current and power capabilities. It’s smaller TO-66 package however was never very popular and was quietly phase out in the early 1980’s, sometimes along with some of the devices that were packaged in it!

Process improvements beyond the single diffused hometaxial-base structure continued through the 1960s with silicon transistors, including double diffused, double- and triple diffused planar and epitaxial structures. The epitaxial structure is a departure from the diffused structures in that features are grown onto the top of the base wafer. With greater control of doping levels and gradients, and more precise and complex geometries, the performance silicon power transistors continued to improve in most all aspects.

Plastic-packaged power transistors have for the most part come to displace hermetic metal packages like the TO-3 (TO-204AA), first due to the lower cost of the part and second, with simpler mounting, reducing the cost and labor of the products they are incorporated into. One drawback of most of the plastic-packaged power devices is their maximum temperature rating has been reduced to typically 150 ^oC, taking back quite a bit of temperature headroom provided by the same devices in hermetic metal packages. Sometimes there is a price to be paid for progress! Pictured in figure 2 are two (of many) popular power device packages, the smaller TO-220AB and the larger TO-247.

Figure 2: TO-220AB and TO-247 power device plastic packages

It’s pretty fascinating to see how transistors and the various processes used to manufacture them evolved over time. In these two posts I’ve hardly scratched the surface of the world of power transistors and power devices. For one there is a variety of other transistor types not touched upon, including a variety of power FETs. Power FETs have made major inroads in all kinds of applications in power supplies. Also work continues to provide higher power devices in surface mount packages. These are just a couple of numerous examples, possibly something to write about at a future date!

References: “RCA Transistor Thyristor & Diode Manual” Technical Series SC-14, RCA Electronic Components, Harrison, NJ 

Early Power Transistor Evolution, Part 1, Germanium

We recently completed our “Test of Time” power supply contest. Contestants told us about how they were using their Harrison Labs/HP/Agilent DC power supplies and the older the power supply, the better. It was pretty fascinating to see the many innovative way these power supplies were being used. It was also fascinating to see so many “vintage” power supplies still functional and in regular use after many decades. Several of them even being vacuum tube based!

One key component found in most all power supplies from the mid 1950s on is, no surprise, power transistors. Shortly after manufacturers were able to make reliable and reasonably rugged transistors in the mid 1950s they also developed transistors that would handle higher currents and power. Along with higher power came the need to dissipate the power. This led to some interesting packaging; some familiar and others not as familiar. Hunting through my “archives” I managed to locate some early power transistors. In review of their characteristics it was quite enlightening to see how they evolved to become better, faster, and cheaper! I also found it is quite challenging to find good, detailed, and most especially, non-conflicting information on these early devices.

Germanium was the first semiconducting material widely adopted for transistors, power and otherwise. One early power transistor I came across was the 2N174, shown in Figure 1.

Figure 1: 2N174 Power Transistor

Following are some key maximum ratings on the 2N174 power transistor:

•  V_CEO = -55V
• V_CBO = -80V
•  V_EBO= -60V
•  I_C = 15A
• P_D = 150W
• hfe= 25
•  f_T = 10 kHz
•  Thermal resistance = 0.35 ^oC/W
•  T_J= 100 ^oC
• Package: TO-36
• Polarity: PNP
• Material/process: Germanium alloy junction

The alloy junction process provided a reliable means to mass produce transistors. Most of the earlier transistors are PNP with N type semiconductor “pellets” or “dots” of typically indium alloyed to a P type germanium wafer. This process favored PNP production as the indium had a lower melting point than the N-type germanium bases. Still, this was a relatively slow and expensive process as they were basically manufactured one at a time. These early alloy junction transistors were not passivated and therefore needed to be hermetically packaged to prevent contamination and degradation. Often referred to as a “door knob” package, the TO-36 stud mount package was quite a piece of work and was no doubt expensive to as a result. It had a pretty impressive junction-to-case thermal resistance but given the maximum temperature of just 100 ^oC, low thermal resistance was necessary in order to operate the transistor at a reasonable power level. The low maximum operating temperature of germanium was one of most limiting attributes, especially for power applications. The transition frequency, fT of just 10 kHz was also extremely low. This is the frequency where current gain, hfe, drops down to 1, ceasing to be an effective amplifier. The 2N174 appears to have originated in the later 1950’s.

Another early power transistor we used in our HP 855B bench power supplies is the 2N1532, as shown in Figure 2.

Figure 2: 2N1532 power transistors used in a Harrison Labs Model 855B power supply.

Following are some key maximum ratings on the 2N1532 power transistor:

• V_CEO = -50V 
• V_CBO = -100V
• V_EBO= -50V
•  I_C = 5A
• P_D = 94W
• hfe= 20 to 40
• f_T = 200 kHz
• Thermal resistance = 0.8 ^oC/W
•  T_J= 100 ^oC
• Package: TO-3
• Polarity: PNP
• Material/process: Germanium alloy junction

The 2N1532 is also a germanium PNP power transistor, similar to a number of other power transistors of the time. It is packaged in the widely recognizable TO-3 diamond-shaped hermetic package.  Being a much less complex case design it must have been considerably less costly than the TO-36 package in Figure 1, and has become one of the most ubiquitous hermetic power semiconductor packages of all times. To keep junction temperature rise down the Harrison Labs Model  855B power supply used three 2N1532 transistors in its series regulator to deliver just  18 volts and 1.5 amps output. It’s no wonder why these power supplies have stood the “Test of Time” as these transistors are running significantly de-rated, at just a fraction of their maximum power here.  It is also noteworthy to see the transition frequency of 200 kHz is 20 times that of the 2N174. This is one of the more questionable data I had found but if it is accurate then clearly design and process improvements contributed to this performance improvement.  While date codes on some of the capacitors in this model 855B power supply place its manufacture in 1962, early germanium PNP power transistors in TO-3 packages like these also typically originate back in the later 1950’s.

While germanium transistors have much greater conductivity, lower forward- and saturation voltage drops compared to silicon transistors, silicon ultimately won out in the end, especially for power transistor applications. Stay tuned for my second part in an upcoming posting. Discover how silicon evolved to rule the day for power transistors!